In situ anion-doped epitaxial strontium titanate films
Author:
Affiliation:
1. Microelectronics Research Unit
2. Faculty of Information Technology and Electrical Engineering
3. University of Oulu
4. Finland
5. Institute of Physics of the Czech Academy of Sciences
6. 18221 Prague
7. Czech Republic
Abstract
Oxygen vacancies, hydrogen, or nitrogen are introduced in strontium titanate during the epitaxial growth of compressively strained films.
Funder
Grantová Agentura České Republiky
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2020/CP/D0CP03644G
Reference30 articles.
1. Expanding frontiers in materials chemistry and physics with multiple anions
2. Effect of Mechanical Boundary Conditions on Phase Diagrams of Epitaxial Ferroelectric Thin Films
3. Phase transitions associated with competing order parameters in compressively strainedSrTiO3thin films
4. Strain-controlled oxygen vacancy formation and ordering in CaMnO3
5. Interplay between strain, defect charge state, and functionality in complex oxides
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