Wide band gap pyromellitic diimides for photo stable n-channel thin film transistors

Author:

Wang Jianing12345,Yu Huinan12345,Fu Tianchen67895,Zhao Changbin67895,Yu Hongtao12345,Liu Zhijun1011125,He Qiang1011125,Zhang Dongwei13141516ORCID,Meng Hong67895ORCID,Huang Wei12345

Affiliation:

1. Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)

2. Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)

3. Nanjing Tech University (Nanjing Tech)

4. Nanjing 211816

5. China

6. School of Advanced Materials

7. Peking University Shenzhen Graduate School

8. Peking University

9. Shenzhen

10. School of Natural and Applied Sciences

11. Northwestern Polytechnical University

12. Xi'an

13. The Institute for Solid State Physics

14. The University of Tokyo

15. Kashiwa

16. Japan

Abstract

Wide energy gaps of PyDI derivatives lead to excellent photostability in OFETs at illumination conditions and transparency on transparent substrates.

Funder

National Natural Science Foundation of China

Pakistan Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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