Wafer-size growth of 2D layered SnSe films for UV-Visible-NIR photodetector arrays with high responsitivity-Reference-Cited by-同舟云学术

Wafer-size growth of 2D layered SnSe films for UV-Visible-NIR photodetector arrays with high responsitivity

Published:2020 Issue:13 Volume:12 Page:7358-7365
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Hao Lanzhong¹²³⁴,Du Yongjun¹²³⁴,Wang Zegao⁵⁶⁷⁴⁸^ORCID,Wu Yupeng¹²³⁴,Xu Hanyang¹²³⁴,Dong Shichang¹²³⁴,Liu Hui¹²³⁴,Liu Yunjie¹²³⁴,Xue Qingzhong¹²³⁴^ORCID,Han Zhide¹²³⁴,Yan Keyou⁹¹⁰¹¹¹²⁴,Dong Mingdong⁸¹³¹⁴¹⁵¹⁶^ORCID

Affiliation:

1. School of Materials Science and Engineering

2. China University of Petroleum

3. Qingdao 266580

4. China

5. College of Materials Science and Engineering

6. Sichuan University

7. Chengdu 610065

8. Interdisciplinary Nanoscience Center (iNANO)

9. School of Environment and Energy

10. National Engineering Laboratory for VOCs Pollution Control Technology and Equipment

11. South China University of Technology

12. Guangzhou 510006

13. the Sino-Danish Center for Education and Research

14. Aarhus University

15. Aarhus 8000

16. Denmark

Abstract

Wafer-size SnSe thin films with high uniformity and high crystal quality were grown by magnetron sputtering technique, and exhibit a highly sensitive to a broadband wavelength with high responsivity of 277.3 AW⁻¹ and detectivity of 7.6 × 1011 Jones.

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Natural Science Foundation of Shandong Province

H2020 Marie Skłodowska-Curie Actions

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR00319K

Reference52 articles.