A study of the initial stages of the growth of Au-assisted epitaxial Ge nanowires on a clean Ge(100) surface-Reference-Cited by-同舟云学术

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A study of the initial stages of the growth of Au-assisted epitaxial Ge nanowires on a clean Ge(100) surface

Published:2014 Issue:12 Volume:16 Page:2486
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Rath A.,Dash J. K.,Juluri R. R.,Ghosh A.,Grieb T.,Schowalter M.,Krause F. F.,Müller K.,Rosenauer A.,Satyam P. V.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/CE/C3CE42254B

Reference24 articles.

1. VA-8 germanium MISFETs exhibiting low interface state density using Ge3N4gate insulator

2. A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor

3. Synthesis of germanium nanowires on insulator catalyzed by indium or antimony

4. VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH

5. Semiconductor Nanowires: From Self-Organization to Patterned Growth

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Axial Heterostructures with Phase-Controlled Metastable Segments via Post-Growth Reactions of Ge Nanowires;Chemistry of Materials;2019-09-11

2. Surface-dependent scenarios for dissolution-driven motion of growing droplets;Scientific Reports;2017-04-19

3. Tuning the configuration of Au nanostructures: from vermiform-like, rod-like, triangular, hexagonal, to polyhedral nanostructures on c-plane GaN;Journal of Materials Science;2016-08-30

4. Dynamics of thermally induced assembly of Au nanoislands from a thin Au layer on Ge(001);CrystEngComm;2016

5. Rapid formation of single crystalline Ge nanowires by anodic metal assisted etching;CrystEngComm;2016

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