Simultaneous optimization of the electrical and thermal transport properties of LuNiSb <i>via</i> aliovalent doping-Reference-Cited by-同舟云学术

Simultaneous optimization of the electrical and thermal transport properties of LuNiSb via aliovalent doping

Published:2023 Issue:26 Volume:11 Page:14067-14074
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Miao Pu¹,Yang Cheng²,Han Shen¹^ORCID,Dai Shengnan²,Li Airan¹,Xi Lili²³^ORCID,Yang Jiong²³^ORCID,Zhu Tiejun¹^ORCID,Fu Chenguang¹^ORCID

Affiliation:

1. State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, 310058 Hangzhou, China

2. Materials Genome Institute, Shanghai University, 99 Shangda Road, 200444 Shanghai, China

3. Zhejiang Laboratory, 311100 Hangzhou, China

Abstract

With the introduction of Sn or Co into half-Heusler compound LuNiSb, it is discovered that aliovalent doping facilitates the simultaneous optimization of electrical and thermal transport properties.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TA/D3TA02735J

Reference49 articles.

1. Advances in thermoelectric materials research: Looking back and moving forward

2. Complex thermoelectric materials

3. High-performance bulk thermoelectrics with all-scale hierarchical architectures

4. Strain field fluctuation effects on lattice thermal conductivity of ZrNiSn-based thermoelectric compounds

5. Short-range order in defective half-Heusler thermoelectric crystals

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