Adjusting the band structure and defects of ZnO quantum dots via tin doping-Reference-Cited by-同舟云学术

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Adjusting the band structure and defects of ZnO quantum dots via tin doping

Published:2017 Issue:19 Volume:7 Page:11345-11354
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Yang Weimin¹²³⁴⁵^ORCID,Zhang Bing¹²³⁴⁵,Zhang Qitu¹²³⁴⁵,Wang Lixi¹²³⁴⁵,Song Bo⁶⁷⁸⁹,Ding Yong⁶⁷⁸⁹,Wong C. P.⁶⁷⁸⁹¹⁰

Affiliation:

1. College of Materials Science and Engineering

2. Nanjing Tech University

3. Nanjing 210009

4. China

5. Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites

6. School of Materials Science and Engineering

7. Georgia Institute of Technology

8. Atlanta

9. USA

10. Faculty of Engineering

Abstract

The structures and band structures of Sn doped ZnO were investigated by density functional theory as well as experiment.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C6RA25940E

Reference42 articles.

1. Excellent UV absorption in spin-coated thin films of oleic acid modified zinc oxide nanorods embedded in Polyvinyl alcohol

2. The Optical Properties of ZnO Nanoparticles Capped with Polyvinyl Butyral

3. Effect of Al concentration on the electrical characteristics of solution-processed Al doped ZnSnO thin film transistors

4. A Numerical Study on Magnetic and Structural Properties of Ni-Doped ZnO Nanoparticles at Extremely Low Temperatures

5. Lanthanum-doped ZnO quantum dots with greatly enhanced fluorescent quantum yield

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