Thermoelectric properties of GaN with carrier concentration modulation: an experimental and theoretical investigation-Reference-Cited by-同舟云学术

Thermoelectric properties of GaN with carrier concentration modulation: an experimental and theoretical investigation

Published:2021 Issue:2 Volume:23 Page:1601-1609
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Kumar Ashish¹²³^ORCID,Singh Saurabh⁴⁵⁶,Patel Ashutosh⁷⁸³,Asokan K.¹²³^ORCID,Kanjilal D.¹²³

Affiliation:

1. Inter-University Accelerator Centre

2. New Delhi

3. India

4. Toyota Technological Institute

5. Nagoya 468-8511

6. Japan

7. Department of Mechanical Engineering

8. IISc Bangalore

Abstract

The present work investigates the less explored thermoelectric properties of the n-type GaN semiconductor by combining both experimental and computational tools.

Funder

Department of Science and Technology, Ministry of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CP/D0CP03950K

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5. Micro-structural and temperature dependent electrical characterization of Ni/GaN Schottky barrier diodes

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