A revised model of silicon oxidation during the dissolution of silicon in HF/HNO3 mixtures-Reference-Cited by-同舟云学术

A revised model of silicon oxidation during the dissolution of silicon in HF/HNO3 mixtures

Published:2019 Issue:39 Volume:21 Page:22002-22013
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Rietig Anja¹²³⁴^ORCID,Langner Thomas¹²³⁴^ORCID,Acker Jörg¹²³⁴^ORCID

Affiliation:

1. Brandenburg University of Technology Cottbus-Senftenberg

2. Department of Physical Chemistry

3. Senftenberg

4. Germany

Abstract

This article presents a comprehensive quantification of the gaseous and dissolved reaction products formed during the etching of Si in HF/HNO₃ mixtures and provides a revised model of HNO₃ reduction during the oxidation of Si.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CP/C9CP04429A

Reference27 articles.

1. Chemical Etching of Silicon

2. Chemical Etching of Silicon

3. Chemical Etching of Silicon

4. On the Mechanism of Chemically Etching Germanium and Silicon

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