Influence of indium tin oxide residues on the electrical performance of hydrogenated amorphous silicon thin-film transistors in the backplane of active-matrix displays-Reference-Cited by-同舟云学术

Influence of indium tin oxide residues on the electrical performance of hydrogenated amorphous silicon thin-film transistors in the backplane of active-matrix displays

Published:2022 Issue:48 Volume:10 Page:18312-18325
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Yu Xiang¹^ORCID,Zhang Zhiqiang¹²,Pei Jingxuan¹,Zhang Jing³,Boukherroub Rabah⁴

Affiliation:

1. Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes National Laboratory of Mineral, Materials School of Materials Science and Technology, China University of Geosciences, Beijing 100083, China

2. Product Development Center, Beijing BOE Optoelectronics Technology Co., Ltd, Beijing 100176, China

3. Qilu University of Technology (Shandong Academy of Sciences), Advanced Materials Institute, Shandong Provincial Key Laboratory of High Strength Lightweight Metallic Materials, Jinan 250014, China

4. Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, UMR 8520, IEMN, F-59000, Lille, France

Abstract

Etching residues of crystallized indium tin oxide (ITO) films deteriorate thin-film transistor (TFT) characteristics and negatively affect the display images.

Funder

National Natural Science Foundation of China

China Scholarship Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC04397A

Reference60 articles.

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2. TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides

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