Gate-tunable ion–electron hybrid phototransistor based on a graphene/RbAg4I5 composite-Reference-Cited by-同舟云学术

Gate-tunable ion–electron hybrid phototransistor based on a graphene/RbAg4I5 composite

Published:2019 Issue:42 Volume:7 Page:13253-13260
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Pengfei¹²³⁴⁵,Yin Jun¹²³⁴⁵,Hu Qianqian¹²³⁴⁵,Lv Bocheng¹²³⁴⁵,Zhu Jia-Lin¹²³⁴⁵,Ma Wanyun¹²³⁴⁵,Dong Zhanmin¹²³⁴,Zhang Wei⁶⁷⁴,Sun Jialin¹²³⁴⁵^ORCID

Affiliation:

1. Department of Physics

2. Tsinghua University

3. Beijing 100084

4. P. R. China

5. State Key Laboratory of Low-Dimensional Quantum Physics

6. Institute of Applied Physics and Computational Mathematics

7. Beijing 100088

Abstract

A phototransistor based on a composite of single-layer graphene and superconductor RbAg₄I₅ realizes linear modulation of the binding energy between electrons and silver ions, resulting in a two order of magnitude increase of photo-response.

Funder

National Basic Research Program of China

National Outstanding Youth Science Fund Project of National Natural Science Foundation of China

Research Grants Council, University Grants Committee

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC04222A

Reference33 articles.

1. Graphene photonics and optoelectronics

2. Imaging of Photocurrent Generation and Collection in Single-Layer Graphene

3. Contact and edge effects in graphene devices

4. Photocurrent Imaging and Efficient Photon Detection in a Graphene Transistor

5. Ultrafast graphene photodetector

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