Review of electrical stimulus methods of<i>in situ</i>transmission electron microscope to study resistive random access memory-Reference-Cited by-同舟云学术

Review of electrical stimulus methods ofin situtransmission electron microscope to study resistive random access memory

Published:2022 Issue:27 Volume:14 Page:9542-9552
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhang Yewei¹,Wang Chaolun¹,Wu Xing¹^ORCID

Affiliation:

1. In Situ Devices Center, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China

Abstract

This review introduces thein situelectrical transmission electron microscope technologies that apply various electrical stimuli to resistive random access memory (RRAM) devices exploring the microscopic process of RRAM in different working modes.

Funder

National Natural Science Foundation of China

Shanghai Municipal Education Commission

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D2NR01872A

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5. Self-Assembled Networked PbS Distribution Quantum Dots for Resistive Switching and Artificial Synapse Performance Boost of Memristors

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