Robust two-dimensional bipolar magnetic semiconductors by defect engineering-Reference-Cited by-同舟云学术

Robust two-dimensional bipolar magnetic semiconductors by defect engineering

Published:2018 Issue:31 Volume:6 Page:8435-8443
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Cheng Haixia¹²³⁴¹^ORCID,Zhou Jun¹⁵⁶⁷,Yang Ming⁸⁵⁹⁷¹⁰^ORCID,Shen Lei¹¹⁵¹²⁷^ORCID,Linghu Jiajun¹⁵⁶⁷,Wu Qingyun¹⁵⁶⁷¹³,Qian Ping¹²³⁴,Feng Yuan Ping¹⁵⁶⁷⁸^ORCID

Affiliation:

1. Department of Physics

2. University of Science and Technology Beijing

3. Beijing 100083

4. China

5. National University of Singapore

6. Singapore 117411

7. Singapore

8. Centre for Advanced 2D Materials and Graphene Research Centre

9. Singapore 117546

10. Institute of Materials Research and Engineering

11. Department of Mechanical Engineering & Engineering Science Programme

12. Singapore 117575

13. Department of Materials Science and Engineering

Abstract

100% spin polarized currents can be obtained in bipolar magnetic semiconductor materials by electrical control.

Funder

China Scholarship Council

Science and Engineering Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC00507A

Reference65 articles.

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4. Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments

5. Electric-field control of local ferromagnetism using a magnetoelectric multiferroic

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