Ultra-high stacks of InGaAs/GaAs quantum dots for high efficiency solar cells-Reference-Cited by-同舟云学术

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Ultra-high stacks of InGaAs/GaAs quantum dots for high efficiency solar cells

Published:2012 Issue:3 Volume:5 Page:6233
ISSN:1754-5692
Container-title:Energy & Environmental Science
language:en
Short-container-title:Energy Environ. Sci.

Author:

Sugaya Takeyoshi,Numakami Osamu,Oshima Ryuji,Furue Shigenori,Komaki Hironori,Amano Takeru,Matsubara Koji,Okano Yoshinobu,Niki Shigeru

Publisher

Royal Society of Chemistry (RSC)

Subject

Pollution,Nuclear Energy and Engineering,Renewable Energy, Sustainability and the Environment,Environmental Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2012/EE/C2EE01930B

Reference12 articles.

1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

2. Operation of the intermediate band solar cell under nonideal space charge region conditions and half filling of the intermediate band

3. Emitter degradation in quantum dot intermediate band solar cells

4. Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells

5. Effect of strain compensation on quantum dot enhanced GaAs solar cells

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