Investigation of field effects in a solid-state nanopore transistor-Reference-Cited by-同舟云学术

Investigation of field effects in a solid-state nanopore transistor

Published:2015 Issue:41 Volume:17 Page:27806-27811
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Youn Yong¹²³⁴,Han Seungwu¹²³⁴

Affiliation:

1. Department of materials Science and Engineering and Research Institute of Advanced Materials

2. Seoul National University

3. Seoul 151-744

4. Korea

Abstract

In order to calculate ion currents through solid-state nanopore transistors realistically, we propose a computational model based on the Poisson–Nernst–Plank equation.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2015/CP/C5CP03125G

Reference47 articles.

1. Nanopores in solid-state membranes engineered for single molecule detection

2. Highly Sensitive, Mechanically Stable Nanopore Sensors for DNA Analysis

3. DNA molecules and configurations in a solid-state nanopore microscope

4. Probing Single DNA Molecule Transport Using Fabricated Nanopores

5. Salt Dependence of Ion Transport and DNA Translocation through Solid-State Nanopores

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