Various configurations of In nanostructures on GaAs (100) by droplet epitaxy-Reference-Cited by-同舟云学术

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Various configurations of In nanostructures on GaAs (100) by droplet epitaxy

Published:2010 Issue:11 Volume:12 Page:3404
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Lee Jihoon,Wang Zhiming,Hirono Yusuke,Kim Eun-Soo,Kim Namyoung,Park Seunghyun,Wang Cong,Salamo G. J.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2010/CE/C0CE00057D

Reference29 articles.

1. New MBE growth method for InSb quantum well boxes

2. Ultra-narrow emission from single GaAs self-assembled quantum dots grown by droplet epitaxy

3. The Control on Size and Density of InAs QDs by Droplet Epitaxy (April 2009)

4. Self-Assembly of Concentric Quantum Double Rings

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1. An analytical model for the bending of radial nanowire heterostructures;Physical Chemistry Chemical Physics;2019

2. Systematic Control of Self-Assembled Au Nanoparticles and Nanostructures Through the Variation of Deposition Amount, Annealing Duration, and Temperature on Si (111);Nanoscale Research Letters;2015-09-30

3. Observation of Shape, Configuration, and Density of Au Nanoparticles on Various GaAs Surfaces via Deposition Amount, Annealing Temperature, and Dwelling Time;Nanoscale Research Letters;2015-05-27

4. Nucleation, transition, and maturing of the self-assembled Au droplets on various type-A GaAs substrates;Journal of Applied Physics;2014-08-28

5. Fabrication of self-assembled Au droplets by the systematic variation of the deposition amount on various type-B GaAs surfaces;Nanoscale Research Letters;2014-08-27

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