High-performance photodetectors based on bandgap engineered novel layer GaSe0.5Te0.5 nanoflakes-Reference-Cited by-同舟云学术

High-performance photodetectors based on bandgap engineered novel layer GaSe0.5Te0.5 nanoflakes

Published:2016 Issue:65 Volume:6 Page:60862-60868
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Zhong Xuying¹²³⁴⁵,Zhou Weichang¹²³⁴⁵,Zhou Yong¹²³⁴⁵,Zhou Fang¹²³⁴⁵,Liu Chang¹²³⁴⁵,Yin Yanling¹²³⁴⁵,Peng Yuehua¹²³⁴⁵,Tang Dongsheng¹²³⁴⁵

Affiliation:

1. Synergetic Innovation Center for Quantum Effects and Application

2. Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education

3. College of Physics and Information Science

4. Hunan Normal University

5. Changsha 410081

Abstract

Layered two-dimensional (2D) gallium monochalcogenide (GaX, X = S, Se, Te) semiconductor crystals hold great promise for potential electronics and photonics application.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA09239J

Reference39 articles.

1. The electronic properties of graphene

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Graphene transistors

4. Ultrasensitive photodetectors based on monolayer MoS2

5. Black phosphorus field-effect transistors

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