Negative electron affinity of the GaN photocathode: a review on the basic theory, structure design, fabrication, and performance characterization.-Reference-Cited by-同舟云学术

Negative electron affinity of the GaN photocathode: a review on the basic theory, structure design, fabrication, and performance characterization.

Published:2021 Issue:38 Volume:9 Page:13013-13040
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Xiaohui¹²,Wang Mengbo¹,Liao Yulong¹^ORCID,Yang Lifeng¹,Ban Qipei¹,Zhang Xiang¹,Wang Zhenying¹,Zhang Shibo¹

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, P. R. China

2. Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, P. R. China

Abstract

A comprehensive review is provided on the basic theory, structure design, fabrication, and performance characterization of the NEA GaN photocathode.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC03244E

Reference132 articles.

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