Wafer-sized WS2 monolayer deposition by sputtering

Author:

Villamayor Michelle Marie S.1,Husain Sajid23,Oropesa-Nuñez Reinier2ORCID,Johansson Fredrik O. L.4ORCID,Lindblad Rebecka5ORCID,Lourenço Pedro6,Bernard Romain6,Witkowski Nadine6,Prévot Geoffroy6ORCID,Sorgenfrei Nomi L. A. N.78ORCID,Giangrisostomi Erika7,Föhlisch Alexander78ORCID,Svedlindh Peter2,Lindblad Andreas4ORCID,Nyberg Tomas1

Affiliation:

1. Division of Solid State Electronics, Department of Electrical Engineering, Uppsala University, Box 65, SE-751 03 Uppsala, Sweden

2. Division of Solid State Physics, Department of Materials Science and Engineering, Uppsala University, Box 35, SE-751 03 Uppsala, Sweden

3. Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France

4. Division of X-ray Photon Science, Department of Physics & Astronomy, Uppsala University, Box 516, SE-751 20 Uppsala, Sweden

5. Division of Inorganic Chemistry, Department of Chemistry-Ångström, Uppsala University, Box 521, SE-751 20 Uppsala, Sweden

6. Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005, Paris, France

7. Institute for Methods and Instrumentation for Synchrotron Radiation Research, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Straße 15, 12489 Berlin, Germany

8. Institut für Physik und Astronomie, Universität Potsdam, Karl-Liebknecht-Straße 24/25, 14476 Potsdam, Germany

Abstract

Radio frequency sputtering by argon ions on a target consisting of tungsten disulphide can create a single layer of the compound on a 4′′ Si-wafer with one W atom per two S atoms when including hydrogen sulphide in the sputtering atmosphere.

Funder

Carl Tryggers Stiftelse för Vetenskaplig Forskning

Agence Nationale de la Recherche

Stiftelsen Olle Engkvist Byggmästare

Deutsche Forschungsgemeinschaft

Marie Sklodowska-Curie Actions

Vetenskapsrådet

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

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