High p doped and robust band structure in Mg-doped hexagonal boron nitride-Reference-Cited by-同舟云学术

High p doped and robust band structure in Mg-doped hexagonal boron nitride

Published:2023 Issue:12 Volume:5 Page:3225-3232
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Khalil Lama¹,Ernandes Cyrine¹,Avila José²,Rousseau Adrien³,Dudin Pavel²^ORCID,Zhigadlo Nikolai D.⁴^ORCID,Cassabois Guillaume³^ORCID,Gil Bernard³^ORCID,Oehler Fabrice¹^ORCID,Chaste Julien¹,Ouerghi Abdelkarim¹^ORCID

Affiliation:

1. Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France

2. Université Paris-Saclay, Synchrotron SOLEIL, L'Orme des Merisiers, BP48, 91190 Saint-Aubin, France

3. Laboratoire Charles Coulomb (L2C), Université de Montpellier, CNRS, 34095 Montpellier, France

4. CrystMat Company, CH-8037, Zurich, Switzerland

Abstract

In two dimensional materials, substitutional doping during growth can be used to alter the electronic properties.

Funder

Agence Nationale de la Recherche

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NA/D2NA00843B

Reference28 articles.

1. The rise of graphene

2. Van der Waals heterostructures

3. Hexagonal boron nitride is an indirect bandgap semiconductor

4. Phonon-Photon Mapping in a Color Center in Hexagonal Boron Nitride

5. Nanometric Resolved Luminescence in h-BN Flakes: Excitons and Stacking Order

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