Efficient FAPbI3–PbS quantum dot graphene-based phototransistors-Reference-Cited by-同舟云学术

Efficient FAPbI3–PbS quantum dot graphene-based phototransistors

Published:2021 Issue:34 Volume:45 Page:15285-15293
ISSN:1144-0546
Container-title:New Journal of Chemistry
language:en
Short-container-title:New J. Chem.

Author:

Aynehband Samaneh¹²,Mohammadi Maryam¹,Poushimin Rana²,Nunzi Jean-Michel²^ORCID,Simchi Abdolreza¹³

Affiliation:

1. Department of Materials Science and Engineering, Sharif University of Technology, 14588 Tehran, Iran

2. Department of Chemistry, Department of Physics, Engineering Physics and Astronomy, Queens University, Kingston, Ontario K7L 3N6, Canada

3. Institute for Nanoscience and Nanotechnology, Sharif University of Technology, 14588 Tehran, Iran

Abstract

PbS quantum dots capped with formamidinium ligands were deposited as graphene-based photodetectors. Solid phase exchange improves the infrared photo-detectivity.

Funder

Iran National Science Foundation

Natural Sciences and Engineering Research Council of Canada

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NJ/D1NJ03139B

Reference67 articles.

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4. Infrared Photodetectors Based on CVD-Grown Graphene and PbS Quantum Dots with Ultrahigh Responsivity

5. Ultrafast graphene photodetector

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