Electronic structure, optoelectronic properties and enhanced photocatalytic response of GaN–GeC van der Waals heterostructures: a first principles study-Reference-Cited by-同舟云学术

Electronic structure, optoelectronic properties and enhanced photocatalytic response of GaN–GeC van der Waals heterostructures: a first principles study

Published:2020 Issue:40 Volume:10 Page:24127-24133
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Huong Pham T.¹²³⁴⁵,Idrees M.⁶⁷⁸⁹,Amin B.⁶¹⁰¹¹⁹^ORCID,Hieu Nguyen N.¹²¹³¹⁴⁵¹⁵^ORCID,Phuc Huynh V.¹⁶¹⁷¹⁸⁵,Hoa Le T.¹²¹³¹⁴⁵¹⁵,Nguyen Chuong V.¹⁹²⁰²¹⁵^ORCID

Affiliation:

1. Division of Computational Mathematics and Engineering

2. Institute for Computational Science

3. Ton Duc Thang University

4. Ho Chi Minh City

5. Vietnam

6. Department of Physics

7. Hazara University

8. Mansehra 21300

9. Pakistan

10. Abbottabad University of Science and Technology

11. Abbottabad 22010

12. Institute of Research and Development

13. Duy Tan University

14. Da Nang 550000

15. Faculty of Natural Sciences

16. Division of Theoretical Physics

17. Dong Thap University

18. Cao Lanh 870000

19. Department of Materials Science and Engineering

20. Le Quy Don Technical University

21. Ha Noi 100000

Abstract

In this work, we systematically studied the electronic structure and optical characteristics of van der Waals (vdW) heterostructure composed of a single layer of GaN and GeC using first principles calculations.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/RA/D0RA04145A

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