Control of the resistive switching voltage and reduction of the high-resistive-state current of zinc oxide by self-assembled monolayers

Author:

Nakano Masahiro1ORCID,Matsui Hiroki1,Nakagawa Sae1,You Jiaxun2,Shahiduzzaman Md.13ORCID,Karakawa Makoto1234ORCID,Taima Tetsuya1234

Affiliation:

1. Department Graduate School of Natural Science and Technology, Kanazawa University, Kakuma-machi, Kanazawa 920-1192, Japan

2. Graduate School of Frontier Science Initiative (InFiniti), Kanazawa University, Kakuma-machi, Kanazawa, 920-1192, Japan

3. Nanomaterial Research Institute (NanoMaRI), Kanazawa University, Kakuma-machi, Kanazawa, Ishikawa 920-1192, Japan

4. Institute for Frontier Science Initiative (InFiniti), Kanazawa University, Kakuma-machi, Kanazawa, 920-1192, Japan

Abstract

The resistive switching voltages of SAM-modified ZnO films were shifted from that of bare ZnO (from 2.9 V to 1.6 V) depending on the surface dipole induced by SAMs, and the on/off ratio was also improved by SAM modification (from 102 to 104).

Funder

Kanazawa University

Japan Society for the Promotion of Science

New Energy and Industrial Technology Development Organization

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,General Chemistry,Ceramics and Composites,Electronic, Optical and Magnetic Materials,Catalysis

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