Role of hydrogen in the chemical vapor deposition growth of MoS2 atomic layers-Reference-Cited by-同舟云学术

Role of hydrogen in the chemical vapor deposition growth of MoS2 atomic layers

Published:2015 Issue:18 Volume:7 Page:8398-8404
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Li Xiao¹²³⁴⁵,Li Xinming⁶⁷,Zang Xiaobei¹²³⁴,Zhu Miao¹²³⁴⁵,He Yijia¹²³⁴⁵,Wang Kunlin¹²³⁴,Xie Dan⁸⁹³⁴,Zhu Hongwei¹²³⁴⁵

Affiliation:

1. School of Materials Science and Engineering

2. State Key Laboratory of New Ceramics and Fine Processing

3. Tsinghua University

4. Beijing 100084, China

5. Center for Nano and Micro Mechanics

6. National Center for Nanoscience and Technology

7. Beijing 100190, China

8. Tsinghua National Laboratory for Information Science and Technology (TNList)

9. Institute of Microelectronics

Abstract

In the two-step chemical vapor deposition growth of MoS₂, hydrogen plays crucial roles as an inhibitor of the thermal-induced etching effect and as a promoter of desulfurization and oxidation of the obtained MoS_x films.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR00904A

Reference30 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Honeycomb Carbon: A Review of Graphene

3. Production, properties and potential of graphene

4. Few-Layer MoS2: A Promising Layered Semiconductor

5. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

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