Influence of growth kinetics on Sn incorporation in direct band gap Ge1−xSnx nanowires-Reference-Cited by-同舟云学术

Influence of growth kinetics on Sn incorporation in direct band gap Ge1−xSnx nanowires

Published:2018 Issue:32 Volume:6 Page:8738-8750
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Doherty Jessica¹²³⁴⁵,Biswas Subhajit¹²³⁴⁵^ORCID,Saladukha Dzianis⁵²³⁴,Ramasse Quentin⁶⁷⁸⁹,Bhattacharya Tara Shankar¹⁰¹¹¹²¹³,Singha Achintya¹⁰¹¹¹²¹³,Ochalski Tomasz J.¹⁴¹⁵¹⁶⁴,Holmes Justin D.¹²³⁴⁵

Affiliation:

1. School of Chemistry

2. University College Cork

3. Cork

4. Ireland

5. Tyndall National Institute

6. SuperSTEM Laboratory

7. SciTech Daresbury Campus

8. Daresbury WA4 4AD

9. UK

10. Department of Physics

11. Bose Institute

12. Kolkata

13. India

14. AMBER@CRANN

15. Trinity College Dublin

16. Dublin 2

Abstract

An investigation of the influence of growth kinetics on Sn incorporation in Ge_1−xSn_x nanowires.

Funder

Science Foundation Ireland

Irish Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC02423E

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4. Lasing in direct-bandgap GeSn alloy grown on Si

5. An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

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