Defect-related dynamics of photoexcited carriers in 2D transition metal dichalcogenides-Reference-Cited by-同舟云学术

Defect-related dynamics of photoexcited carriers in 2D transition metal dichalcogenides

Published:2021 Issue:14 Volume:23 Page:8222-8235
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Gao Lei¹²³⁴,Hu Zhenliang¹²³⁴,Lu Junpeng¹²³⁴^ORCID,Liu Hongwei⁵⁶⁷⁸⁴^ORCID,Ni Zhenhua¹²³⁴

Affiliation:

1. School of Physics and Key Laboratory of MEMS of the Ministry of Education

2. Southeast University

3. Nanjing 211189

4. China

5. Jiangsu Key Lab on Opto-Electronic Technology

6. School of Physics and Technology

7. Nanjing Normal University

8. Nanjing 210023

Abstract

Defects participate various relaxation mechanisms and alter the trace and time scale of the decay process in two-dimensional (2D) transition metal dichalcogenides (TMDs).

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CP/D1CP00006C

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