Tunable electronic and optical properties of InSe/InTe van der Waals heterostructures toward optoelectronic applications-Reference-Cited by-同舟云学术

Tunable electronic and optical properties of InSe/InTe van der Waals heterostructures toward optoelectronic applications

Published:2018 Issue:27 Volume:6 Page:7201-7206
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Shang Jimin¹²³⁴^ORCID,Pan Longfei⁵⁶⁷⁸⁹,Wang Xiaoting⁵⁶⁷⁸⁹,Li Jingbo⁵⁶⁷⁸⁹,Deng Hui-Xiong⁵⁶⁷⁸⁹,Wei Zhongming⁵⁶⁷⁸⁹^ORCID

Affiliation:

1. School of Physics and Electronics Engineering

2. Zhengzhou University of Light Industry

3. Zhengzhou 450002

4. China

5. State Key Laboratory of Superlattices and Microstructures

6. Institute of Semiconductors

7. Chinese Academy of Sciences & College of Materials Science and Opto-Electronic Technology

8. University of Chinese Academy of Sciences

9. Beijing 100083

Abstract

2D InSe/InTe van der Waals heterostructures with a direct band structure and typical type-II band alignment, effectively tuned by applying normal strain, are systematically discussed for future optoelectronic devices.

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

State Administration of Foreign Experts Affairs

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC01533C

Reference46 articles.

1. Single-layer MoS2 transistors

2. Van der Waals heterostructures

3. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

4. Ultrathin MXene-Micropattern-Based Field-Effect Transistor for Probing Neural Activity

5. Fine Structure Constant Defines Visual Transparency of Graphene

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