Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfO<sub>x</sub> ReRAM devices-Reference-Cited by-同舟云学术

Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfO_x ReRAM devices

Published:2024 Issue:5 Volume:9 Page:775-784
ISSN:2055-6756
Container-title:Nanoscale Horizons
language:en
Short-container-title:Nanoscale Horiz.

Author:

Falcone Donato Francesco¹^ORCID,Menzel Stephan²^ORCID,Stecconi Tommaso¹,Galetta Matteo¹,La Porta Antonio¹,Offrein Bert Jan¹,Bragaglia Valeria¹^ORCID

Affiliation:

1. IBM Research Europe – Zürich, 8803 Rüschlikon, Switzerland

2. Peter Gruenberg Institute 7, Forschungszentrum Juelich GmbH, 52425 Juelich, Germany

Abstract

The recent co-optimization of memristive technologies and programming algorithms enabled neural networks training with in-memory computing systems.

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

H2020 LEIT Information and Communication Technologies

H2020 LEIT Advanced Materials

Bundesministerium für Bildung und Forschung

H2020 LEIT Space

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NH/D4NH00072B

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