The nitrogen concentration effect on Ce doped SiOxNy emission: towards optimized Ce3+ for LED applications-Reference-Cited by-同舟云学术

The nitrogen concentration effect on Ce doped SiOxNy emission: towards optimized Ce3+ for LED applications

Published:2018 Issue:8 Volume:10 Page:3823-3837
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Ehré F.¹²³⁴⁵^ORCID,Labbé C.¹²³⁴⁵,Dufour C.¹²³⁴⁵,Jadwisienczak W. M.⁶⁷⁸⁹,Weimmerskirch-Aubatin J.¹²³⁴⁵,Portier X.¹²³⁴⁵,Doualan J.-L.¹²³⁴⁵,Cardin J.¹²³⁴⁵,Richard A. L.¹⁰⁷⁸⁹,Ingram D. C.¹⁰⁷⁸⁹,Labrugère C.¹¹¹²¹³¹⁴¹⁵,Gourbilleau F.¹²³⁴⁵

Affiliation:

1. CIMAP

2. Normandie Univ

3. ENSICAEN

4. UNICAEN

5. CEA

6. School of Electrical Engineering and Computer Science

7. Ohio University

8. Athens

9. USA

10. Department of Physics and Astronomy

11. PLACAMAT

12. UMS 3626

13. CNRS-Université Bordeaux

14. 33600 Pessac

15. France

Abstract

Ce-Doped SiO_xN_y films are deposited by magnetron reactive sputtering from a CeO₂ target under a nitrogen reactive gas atmosphere.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C7NR06139K

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3. G. Blasse and B. C.Grabmaier , Luminescent Materials , Springer Berlin Heidelberg , Berlin, Heidelberg , 1994

4. Study on the effects of 5d energy locations of Ce^3+ ions on NIR quantum cutting process in Y_2SiO_5: Ce^3+, Yb^3+

5. Amorphous silicon nitride thin films implanted with cerium ions for cathodoluminescent light source

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