Electrically and optically erasable non-volatile two-dimensional electron gas memory-Reference-Cited by-同舟云学术

Electrically and optically erasable non-volatile two-dimensional electron gas memory

Published:2022 Issue:34 Volume:14 Page:12339-12346
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zheng Dongxing¹²,Zhang Junwei¹³,He Xin¹^ORCID,Wen Yan¹,Li Peng¹⁴,Wang Yuchen²,Ma Yinchang¹^ORCID,Bai Haili²^ORCID,Alshareef Husam N.¹^ORCID,Zhang Xi-Xiang¹^ORCID

Affiliation:

1. King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia

2. Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, P. R. China

3. Key Laboratory of Magnetism and Magnetic Materials of Ministry of Education, School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, PR China

4. State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Abstract

We report an electrically and optically erasable non-volatile memory based on metal–insulator phase transition in oxide 2D electron gas. The metallic and insulating states can be reversibly modulated by illumination and pulse voltage gating.

Funder

King Abdullah University of Science and Technology

National Natural Science Foundation of China

Natural Science Foundation of Tianjin City

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D2NR01582J

Reference42 articles.

1. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface