Nuclear quantum tunnelling and carrier delocalization effects to bridge the gap between hopping and bandlike behaviors in organic semiconductors-Reference-Cited by-同舟云学术

Nuclear quantum tunnelling and carrier delocalization effects to bridge the gap between hopping and bandlike behaviors in organic semiconductors

Published:2016 Issue:1 Volume:1 Page:53-59
ISSN:2055-6756
Container-title:Nanoscale Horizons
language:en
Short-container-title:Nanoscale Horiz.

Author:

Jiang Yuqian¹²³⁴⁵,Zhong Xinxin⁶⁷⁸⁹¹⁰,Shi Wen¹²³⁴,Peng Qian¹¹¹²⁴,Geng Hua¹¹¹²⁴,Zhao Yi¹³¹⁴¹⁵¹⁶⁴,Shuai Zhigang¹²³⁴¹³

Affiliation:

1. MOE Key Laboratory of Organic Optoelectronics and Molecular Engineering

2. Department of Chemistry

3. Tsinghua University

4. China

5. National Center for Nanoscience and Technology

6. Hubei Collaborative Innovation Center for Advanced Organic

7. Chemical Materials

8. and College of Chemistry and Chemical Engineering

9. Hubei University

10. Wuhan 430062

11. Institute of Chemistry

12. Chinese Academy of Sciences

13. Collaborative Innovation Center of Chemistry for Energy Materials

14. College of Chemistry and Chemical Engineering

15. Xiamen University

16. Xiamen 361005

Abstract

Our research investigated the significant role of nuclear tunnelling and carrier delocalization effects in the charge transport process of organic semiconductors.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2016/NH/C5NH00054H

Reference57 articles.

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2. High-Mobility Transistors Based on Single Crystals of Isotopically Substituted Rubrene-d28

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4. Intrinsic Charge Transport on the Surface of Organic Semiconductors

5. Highly Soluble [1]Benzothieno[3,2-b]benzothiophene (BTBT) Derivatives for High-Performance, Solution-Processed Organic Field-Effect Transistors

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