A high-performance short-wave infrared phototransistor based on a 2D tellurium/MoS2 van der Waals heterojunction-Reference-Cited by-同舟云学术

A high-performance short-wave infrared phototransistor based on a 2D tellurium/MoS2 van der Waals heterojunction

Published:2021 Issue:38 Volume:9 Page:13123-13131
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Yao Jinrong¹^ORCID,Chen Fangfang¹^ORCID,Li Juanjuan¹^ORCID,Du Junli²,Wu Di¹^ORCID,Tian Yongtao¹^ORCID,Zhang Cheng³,Yang Jinke⁴,Li Xinjian¹,Lin Pei¹^ORCID

Affiliation:

1. Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, People's Republic of China

2. State Grid Henan Electric Power Research Institute, Zhengzhou 450052, People's Republic of China

3. National Joint Engineering Research Center for Abrasion Control and Molding of Metal Materials, School of Materials Science and Engineering, Henan University of Science and Technology, Luoyang 471003, People's Republic of China

4. School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, People's Republic of China

Abstract

A gate-tunable Te/MoS2 vdW heterostructure is fabricated, exhibiting favourable photodetection properties with a response spectrum covering the whole SWIR band.

Funder

Science and Technology Department, Henan Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC02502C

Reference54 articles.

1. Short-wave infrared InGaAs photodetectors and focal plane arrays

2. Progress, challenges, and opportunities for HgCdTe infrared materials and detectors

3. Progress, Challenges, and Opportunities for 2D Material Based Photodetectors