Localized coherent phonon generation in monolayer MoSe<sub>2</sub> from ultrafast exciton trapping at shallow traps-Reference-Cited by-同舟云学术

Localized coherent phonon generation in monolayer MoSe₂ from ultrafast exciton trapping at shallow traps

Published:2023 Issue:9 Volume:8 Page:1282-1287
ISSN:2055-6756
Container-title:Nanoscale Horizons
language:en
Short-container-title:Nanoscale Horiz.

Author:

Bae Soungmin¹²,Jeong Tae Young³,Raebiger Hannes²,Yee Ki-Ju³,Kim Yong-Hoon¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea

2. Department of Physics, Yokohama National University, Yokohama, Japan

3. Department of Physics, Chungnam National University, Daejeon 34134, Korea

Abstract

Spectroscopic evidence for the conversion of defect-trapped excitons into localized coherent phonons in monolayer MoSe2 is provided, and the VSe + O2 complex (an oxygen molecule adsorbed on a Se vacancy) is identified as the shallow trap center.

Funder

Japan Society for the Promotion of Science

National Research Foundation of Korea

Korea Institute of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NH/D3NH00194F

Reference40 articles.

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4. Optical identification of sulfur vacancies: Bound excitons at the edges of monolayer tungsten disulfide

5. Defect-Induced Vibration Modes of Ar+ -Irradiated MoS2

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