Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si
Author:
Affiliation:
1. Arizona State University
2. School of Electrical
3. Computer and Energy Engineering
4. Tempe
5. USA
Abstract
Calculated DOS of a-Si:H close to the band gap for different H concentrations in the case of (a) thermodynamic and (b) kinetic H addition.
Funder
National Science Foundation
U.S. Department of Energy
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2019/CP/C9CP01121H
Reference84 articles.
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4. L. E. Antonuk , J. M.Boudry , C.-W.Kim , M.Longo , E.Morton , J.Yorkston and R. A.Street , Medical Imaging V: Image Physics , 1991 , p. 108
5. Field‐effect phenomena in hydrogenated amorphous silicon photoreceptors
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