Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si

Author:

Vatan Meidanshahi Reza12345ORCID,Bowden Stuart12345,Goodnick Stephen M.12345

Affiliation:

1. Arizona State University

2. School of Electrical

3. Computer and Energy Engineering

4. Tempe

5. USA

Abstract

Calculated DOS of a-Si:H close to the band gap for different H concentrations in the case of (a) thermodynamic and (b) kinetic H addition.

Funder

National Science Foundation

U.S. Department of Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

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