Origin of the highly anisotropic thermal expansion of the semiconducting ZnSb and relations with its thermoelectric applications-Reference-Cited by-同舟云学术

Origin of the highly anisotropic thermal expansion of the semiconducting ZnSb and relations with its thermoelectric applications

Published:2015 Issue:106 Volume:5 Page:87118-87131
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Hermet P.¹²³⁴⁵,Koza M. M.⁶⁷⁵,Ritter C.⁶⁷⁵,Reibel C.¹²³⁴⁵,Viennois R.¹²³⁴⁵

Affiliation:

1. Institut Charles Gerhardt Montpellier

2. UMR-5253 CNRS

3. Université de Montpellier

4. 34095 Montpellier Cédex 5

5. France

6. Institut Laue Langevin

7. 38042 Grenoble Cédex 9

Abstract

This article is devoted to the thermal expansion of ZnSb combining experiments (neutron and X-ray) and calculations based on density functional theory.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA16956A

Reference63 articles.

1. Crystal growth, characterization and application of II V compounds

2. Optical and Electrical Properties and Energy Band Structure of ZnSb

3. Thermal and Electronic Transport Properties ofp-Type ZnSb

4. Quasi-Intercalation and Facile Amorphization in Layered ZnSb for Li-Ion Batteries

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