Analysis of the mechanism for enhanced crystalline quality of wide-bandgap Cu(In,Ga)Se2 films by pre-deposited Ag

Author:

Yao Yifeng1,Liu Yunfeng1,Ma Jingyi1,Yang Xiao1,Meng He1,Liu Fangfang1,Zhang Yunxiang2,Shi Jiangjian3,Meng Qingbo3,Liu Wei1ORCID

Affiliation:

1. Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, State Key Laboratory of Photovoltaic Materials and Cells, Tianjin 300350, P. R. China

2. School of Materials Science and Engineering, Key Laboratory for Ecological-Environment Materials of Jiangsu Province, Yancheng Institute of Technology, Yancheng, 224051, P. R. China

3. Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China

Abstract

Ag doping achieves high-quality wide-bandgap CIGS films by controlling the (In,Ga)2Se3 film growth preference and Ag–Cu ion exchange process.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

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