Research progress on topological material-based photodetectors
Author:
Affiliation:
1. Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Abstract
Funder
National Natural Science Foundation of China
Basic and Applied Basic Research Foundation of Guangdong Province
Shenzhen Science and Technology Innovation Program
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science,Chemistry (miscellaneous)
Link
http://pubs.rsc.org/en/content/articlepdf/2023/MA/D3MA00452J
Reference121 articles.
1. Phonon-enhanced photothermoelectric effect in SrTiO3 ultra-broadband photodetector
2. Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging
3. Plasmonic semiconductors: materials, tunability and applications
4. Low‐Voltage Operational, Low‐Power Consuming, and High Sensitive Tactile Switch Based on 2D Layered InSe Tribotronics
5. Self‐Powered Broad Spectral Photodetector with Ultrahigh Responsivity and Fast Response Based on Sb 2 Se 3 /VO 2 Heterojunction
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