Half-metallic and magnetic semiconductor behavior in CdO monolayer induced by acceptor impurities-Reference-Cited by-同舟云学术

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Half-metallic and magnetic semiconductor behavior in CdO monolayer induced by acceptor impurities

Published:2023 Issue:20 Volume:25 Page:14266-14273
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Ponce-Pérez R.¹,Guerrero-Sanchez J.¹,Hoat D. M.²³^ORCID

Affiliation:

1. Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Apartado Postal 14, Ensenada, Baja California, Código Postal 22800, Mexico

2. Institute of Theoretical and Applied Research, Duy Tan University, Ha Noi 100000, Vietnam

3. Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam

Abstract

A doping approach is explored as a possible method to induce novel features in the CdO monolayer for spintronic applications.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP01268A

Reference52 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Review on graphene and its derivatives: Synthesis methods and potential industrial implementation

3. Chemistry of Graphene Derivatives: Synthesis, Applications, and Perspectives

4. Silicene field-effect transistors operating at room temperature

5. Rise of silicene: A competitive 2D material

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