Effect of vacancy defects on transport in all-phosphorene nanoribbon devices from first principles-Reference-Cited by-同舟云学术

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Effect of vacancy defects on transport in all-phosphorene nanoribbon devices from first principles

Published:2023 Issue:27 Volume:25 Page:18378-18386
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Huang Jingyuan¹,Zhang Qiang¹,Liu Xiaojie¹,Wang Yin²^ORCID,Yin Haitao¹^ORCID

Affiliation:

1. Key Laboratory for Photonic and Electronic Bandgap Materials of Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China

2. Department of Physics and International Centre for Quantum and Molecular Structures, Shanghai University, Shanghai, 200444, China

Abstract

(1) A double-vacancy defect can introduce in-gap states whereas a single-vacancy defect can result in p-type doping; (2) an edge state masks the effect of point defects on transport in all-phosphorene nanoribbon device.

Funder

Natural Science Foundation of Heilongjiang Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP01266B

Reference45 articles.

1. Recent advances in low-dimensional Janus materials: theoretical and simulation perspectives

3. Self-Limiting Opto-Electrochemical Thinning of Transition-Metal Dichalcogenides

4. Electronic Transport Properties and Nanodevice Designs for Monolayer MoSi2P4

5. Multifunctional Lateral Transition‐Metal Disulfides Heterojunctions

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