In situ growth of metal-sulfide film with solvent-free element-direct reaction: the case of PbS on ITO-Reference-Cited by-同舟云学术

In situ growth of metal-sulfide film with solvent-free element-direct reaction: the case of PbS on ITO

Published:2015 Issue:107 Volume:5 Page:88141-88148
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Fan Libo¹²³⁴⁵,Wang Peng¹²³⁴,Guo Qiuquan⁶⁷⁸⁹¹⁰,Zhang Zhenhua¹¹¹²¹³⁴,Li Ming¹²³⁴,Han Hongpei¹²³⁴,Xu Shuolu¹²³⁴,Zhang Dongxing⁶⁷⁸⁹¹⁰,Zheng Zhi⁵¹⁴²³⁴,Yang Jun⁶⁷⁸⁹¹⁰

Affiliation:

1. School of Electrical Engineering

2. Xuchang University

3. Henan 461000

4. China

5. Key Laboratory of Micro-Nano Materials for Energy Storage and Conversion of Henan Province

6. Department of Mechanical & Materials Engineering

7. Faculty of Engineering

8. Western University

9. London

10. Canada

11. School of Chemical Engineering and Energy

12. Zhengzhou University

13. Henan 450001

14. Institute of Surface Micro and Nano Materials

Abstract

In order to prevent the metal-sulfide film from falling off a substrate during in situ preparation, a solvent-free element-direct reaction was developed.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA13640G

Reference43 articles.

1. Recent advances in semiconductors for photocatalytic and photoelectrochemical water splitting

2. Quantum-confined strain gradient effect in semiconductor nanomembranes

3. Self-assembly of nanostructured PbS for solar photovoltaic applications

4. Combined chemical–physical methods for enhancing IR photoconductive properties of PbS thin films

5. Facile method of preparation of PbS films for NO2 detection

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