Study of the morphological, optical, structural and electrical properties of silicon nanowires at varying concentrations of the catalyst precursor

Author:

Rai Sadhna1,Bhujel Rabina1,Mondal Manas Kumar2,Swain Bibhu Prasad3ORCID,Biswas Joydeep4ORCID

Affiliation:

1. Centre for Materials Science and Nanotechnology, Sikkim Manipal Institute of Technology, Sikkim Manipal University, Majhitar, 737136, East Sikkim, India

2. Department of Metallurgical and Materials Engineering, National Institute of Technology Durgapur, Durgapur 713209, India

3. Department of Physics, National Institute of Technology, Manipur, Langol 795004, Manipur, India

4. Department of Chemistry, Sikkim Manipal Institute of Technology, Sikkim Manipal University, Majhitar, 737136, East Sikkim, India

Abstract

Silicon nanowires (SiNWs) were grown by metal-assisted chemical etching of a p-type (100) silicon wafer.

Funder

UGC-DAE Consortium for Scientific Research, University Grants Commission

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Chemistry (miscellaneous)

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