Terahertz spectroscopic characterization of Ge2Sb2Te5 phase change materials for photonics applications
Author:
Affiliation:
1. Nanoelectronics Research Institute
2. National Institute of Advanced Industrial Science and Technology (AIST)
3. Tsukuba 305-8565
4. Japan
5. Institute of Laser Engineering (ILE)
6. Osaka University
7. Suita
8. Department of Physical Electronics
Abstract
Ge–Sb–Te (GST) phase change materials exhibit a metal-to-insulator transition and therefore are expected to be useful for a variety of terahertz wave applications in addition to their primary application in optical and electrical memory devices.
Funder
Japan Society for the Promotion of Science
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC01456J
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