Novel design for the odd-symmetric memristor from asymmetric switches
Author:
Affiliation:
1. Department of Materials Science and Engineering
2. Michigan Technological University
3. Houghton
4. USA
Abstract
A novel strategy, in which two same asymmetric A/B structure switch components can be combined as a symmetric A/B/A structured device, is developed to create an odd-symmetric memristor. Furthermore, the feasibility of this strategy is experimentally confirmed by a Ag2S/Ag/Ag2S memristor, which exhibits an odd-symmetric I–V curve with a pinched hysteresis loop.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC00265F
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