Overwhelming coexistence of negative differential resistance effect and RRAM-Reference-Cited by-同舟云学术

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Overwhelming coexistence of negative differential resistance effect and RRAM

Published:2018 Issue:31 Volume:20 Page:20635-20640
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Guo Tao¹²³⁴⁵,Sun Bai¹²³⁴⁵^ORCID,Zhou Yu¹²³⁴⁵,Zhao Hongbin⁶⁷⁸⁵,Lei Ming¹²³⁴⁵,Zhao Yong¹²³⁴⁵

Affiliation:

1. Key Laboratory of Advanced Technology of Materials

2. Ministry of Education of China

3. Southwest Jiaotong University

4. Chengdu 610031

5. China

6. State Key Laboratory of Advanced Materials for Smart Sensing

7. General Research Institute for Nonferrous Metals

8. Beijing

Abstract

An overwhelming coexistence of NDR effect and RS memory behavior at room temperature was observed based on Ag/CZTSe/Mo devices.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CP/C8CP03492C

Reference45 articles.

1. Memristor-The missing circuit element

2. The missing memristor found

3. Enhanced resistive switching effect upon illumination in self-assembled NiWO4nano-nests

4. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication

5. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

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4. Moisture-modulated resistive switching behavior based on CaTiO3 prepared by the appropriate NaOH concentration;Chemical Physics;2024-02

5. Multi-factors-regulated multi-level down-scalable and robust memristors;Materials Today Chemistry;2024-01

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