Nonequilibrium thermodynamic model of thermoelectricity and thermodiffusion in semiconductors

Author:

Semenov Semen N.1ORCID,Schimpf Martin E.2

Affiliation:

1. Institute of Biochemical Physics RAS, Kosygin Street 4, 119334, Moscow, Russia

2. Department of Chemistry, Boise State University, Boise, ID, USA

Abstract

We present a self-consistent model rooted in nonequilibrium thermodynamics for defining concentration gradients in the electron/hole pairs and electric-field gradients in an intrinsic semiconductor created upon exposure to a temperature gradient.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference26 articles.

1. H.Julian Goldsmidt , Introduction to Thermoelectricity, Springer Series in materials science 121 , ed., R.Hull , R. M.Osgood Jr. , J.Parisi and H.Warlimont , 2010

2. Effective masses of electrons and heavy holes in GaAs, InAs, A1As and their ternary compounds

3. Estimation of the thermal band gap of a semiconductor from seebeck measurements

4. D.Kondepudi and I.Prigogine , Modern Thermodynamics , From Heat Engines to Dissipative Structures , Wiley , New York , 2nd edn, 2015

5. S. R.De Groot and P.Mazur , Non-equilibrium Thermodynamics , North-Holland , Amsterdam , 1962

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