Enhancing the interfacial thermal conductance of Si/PVDF by strengthening atomic couplings-Reference-Cited by-同舟云学术

Enhancing the interfacial thermal conductance of Si/PVDF by strengthening atomic couplings

Published:2023 Issue:40 Volume:15 Page:16472-16479
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zong Zhicheng¹,Deng Shichen¹,Qin Yangjun¹,Wan Xiao¹,Zhan Jiahong¹,Ma Dengke²^ORCID,Yang Nuo¹^ORCID

Affiliation:

1. School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

2. Phonon Engineering Research Center of Jiangsu Province, Center for Quantum Transport and Thermal Energy Science, Institute of Physics and Interdisciplinary Science, School of Physics and Technology, Nanjing Normal University, Nanjing 210023, China

Abstract

Through the modification of the Si surface with hydroxyl groups, the interfacial thermal conductance (ITC) of the Si/PVDF interface can be significantly enhanced by up to 698%, owing to the strengthening of atomic couplings.

Funder

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR03706A

Reference65 articles.

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