Atomic layer deposition of B-doped ZnO using triisopropyl borate as the boron precursor and comparison with Al-doped ZnO
Author:
Affiliation:
1. Department of Applied Physics
2. Eindhoven University of Technology
3. 5600 MB Eindhoven
4. The Netherlands
5. School of Biological & Chemical Sciences
6. Solliance Solar Research
Abstract
The doping efficiency and hence the electrical properties of atomic layer deposited ZnO can be improved by using a novel, safer boron precursor.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/TC/C4TC02707H
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