A highly simple and controllable nitrogen-doping method for carbon-based surface-enhanced Raman spectroscopy substrates

Author:

Marumi Machiko1,Tang Xuke1,Kesava Rao V.12ORCID,Alodhayb Abdullah N.3ORCID,Kulkarni Manish M.4,Dwivedi Prabhat K.4ORCID,Lisi Fabio1ORCID,Kitahama Yasutaka12ORCID,Xiao Ting-Hui156ORCID,Goda Keisuke12789ORCID

Affiliation:

1. Department of Chemistry, The University of Tokyo, Tokyo 113-0033, Japan

2. LucasLand, Tokyo 101-0052, Japan

3. Department of Physics and Astronomy, College of Science, King Saud University, Riyadh, 11451, Saudi Arabia

4. Centre for Nanosciences, Indian Institute of Technology Kanpur, Kanpur 208016, India

5. Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China

6. Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou 450046, China

7. Institute for Quantum Life Science, National Institute for Quantum and Radiological Science and Technology, Chiba 263-8555, Japan

8. Institute of Technological Sciences, Wuhan University, Hubei 430072, China

9. Department of Bioengineering, University of California, Los Angeles, California 90095, USA

Abstract

We controlled N doping and expansion of the conjugated system in polyacrylonitrile (PAN)-based SERS substrates by varying the pyrolysis temperature.

Funder

Ministry of Education, Culture, Sports, Science and Technology

Murata Science Foundation

Japan Science and Technology Agency

Japan Society for the Promotion of Science

Department of Science and Technology, Ministry of Science and Technology, India

University of Tokyo

Publisher

Royal Society of Chemistry (RSC)

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