Electronic and excitonic properties of two-dimensional and bulk InN crystals-Reference-Cited by-同舟云学术

Electronic and excitonic properties of two-dimensional and bulk InN crystals

Published:2017 Issue:67 Volume:7 Page:42455-42461
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Liang Dan¹²³⁴,Quhe Ruge⁵²³⁴^ORCID,Chen Yingjie⁶²³⁴,Wu Liyuan¹²³⁴,Wang Qian¹²³⁴,Guan Pengfei⁷⁸⁴,Wang Shumin⁹¹⁰¹¹¹²⁴,Lu Pengfei¹²³⁴⁹^ORCID

Affiliation:

1. State Key Laboratory of Information Photonics and Optical Communications

2. Beijing University of Posts and Telecommunications

3. Beijing 100876

4. China

5. School of Sciences

6. School of Information and Communication Engineering

7. Beijing Computational Science Research Center

8. Beijing 100193

9. State Key Laboratory of Functional Materials for Informatics

10. Shanghai Institute of Microsystem and Information Technology

11. Chinese Academy of Sciences

12. Shanghai 200050

Abstract

Motivated by potential extensive applications in nanoelectronics devices, we calculate structural and optoelectronic properties of two-dimensional InN as well as its three-dimensional counterparts by using density functional theory.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA07640A

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