Sc3N@C80 and La@C82 doped graphene for a new class of optoelectronic devices-Reference-Cited by-同舟云学术

Sc3N@C80 and La@C82 doped graphene for a new class of optoelectronic devices

Published:2020 Issue:12 Volume:8 Page:3970-3981
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Jayanand Kishan¹²³⁴⁵,Chugh Srishti¹²³⁴⁵,Adhikari Nirmal⁶⁷⁸⁵,Min Misook¹²³⁴⁵,Echegoyen Luis⁹⁷⁸⁵^ORCID,Kaul Anupama B.¹²³⁴⁵^ORCID

Affiliation:

1. Department of Materials Science and Engineering

2. PACCAR Technology Institute

3. University of North Texas

4. Denton

5. USA

6. Department of Electrical Engineering

7. University of Texas at El Paso

8. El Paso

9. Department of Chemistry

Abstract

Hybrid graphene photodetectors (PDs) with endohedral Sc₃N@C₈₀ and La@C₈₂ were used by the Kaul Research Group at the University of North Texas to dope graphene p-type and n-type, respectively, that resulted in significant optoelectronic property enhancement of the PDs.

Funder

Air Force Office of Scientific Research

Welch Foundation

National Science Foundation

Army Research Office

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/C9TC06145B

Reference59 articles.