Strain effect on the field-effect sensing property of Si wires-Reference-Cited by-同舟云学术

Strain effect on the field-effect sensing property of Si wires

Published:2023 Issue:4 Volume:25 Page:3279-3286
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Lin Yuan¹,Zhang Bingchang²^ORCID,Shi Yihao¹,Zheng Yongchao³^ORCID,Yu Jia¹,Jie Jiansheng¹^ORCID,Zhang Xiaohong¹⁴^ORCID

Affiliation:

1. Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, 215123, Jiangsu, P. R. China

2. School of Optoelectronic Science and Engineering, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province, Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, 215123, Jiangsu, P. R. China

3. State Key Laboratory of NBC Protection for Civilian, Research Institute of Chemical Defense, Beijing 102205, P. R. China

4. Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, 215123, Jiangsu, P. R. China

Abstract

Strain has an obvious impact on the field-effect sensing property of Si wires, which is mainly attributed to the change in adsorption energy between silicon wires and the analyte under different strains.

Funder

Natural Science Foundation of Jiangsu Province

National Natural Science Foundation of China

Collaborative Innovation Center of Suzhou Nano Science and Technology

Priority Academic Program Development of Jiangsu Higher Education Institutions

Higher Education Discipline Innovation Project

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D2CP04805A